Most of semiconductor devices used in optical communication networks are made of InGaAsP material. It has since became obvious that devices made of InGaAsP have lower performance due to high thermal sensitivies of this material. Huge effort to find material that will replace the incumbent InGaAsP has been deployed.
Thermal sensitivity of InGaAsP is written in its band structure. It has smaller conduction band-offset allowing thermally activated carriers to escape easily into barriers, and larger valence band offset inhibiting quick carrier emptying. There are many suitable candidates one of them being InGaAlAs which have larger conduction band offset and smaller valence band offset compared to InGaAsP. The race to depose the incumbent InGaAsP is on with new exotic materials such as dilute Nitrides, Bismides and many more...
No comments:
Post a Comment