The Promises of Quantum Dot Lasers

In 1982 Prof Arakawa and Prof Sakaki proposed that due to confinement nature of quantum dots, devices that will be made using them should be temperature insensitive.

Many researchers have tried to harness the power of 3D electron confinement but met with promising results using different techniques. The prediction that the devices will have low threshold current densities have yet to be proved. Temperature insensitivity comes with high threshold current densities and highly doped devices.

For undoped(Intrinsic) semiconductor devices temperature insensitivity and low threhold currents have not been materialised. The biggest obstacle in my view could be associateed with the fabrication process of these devices. Stranski-Krastanov method produce inhommogeneous dots and a wetting layer which could act as source of non-radiative recombinations centers.

Calculations still show if we can create a perfect quantum dot we should have a perfect LASER that will have both low threshold current densities and temperature insensitive.