Wednesday, 12 January 2011

Why Sputtering Silicon Oxide on InP based device?

Previously i wrote about my efforts to deposit a thin layer of silicon dioxide on a laser device. The aim was to create an anti-reflection coating that will enable me to measure the gain of the laser device using a single pass method on segmented device.

The thickness of the coating will depend on effective refractive index of the device and other factors. The objective is to create quarter wavelength layer to prevent reflection of light in the cavity.

This gain measurement method is different from Hakki-Paoli Method. This method was pioneered by Prof. Smowton and Prof. Blood, where the device is divided into equal segments with longer absober segment on one end. When this segments are pumped separately can provide a way to measure absorption of the active medium and hence we can calculate modal gain. With this information we can gain knowledge on how to improve the device performance..that is the MAIN GOAL..

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